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BC806-25VL Datasheet
Datasheet specifications
| Datasheet's name | BC806-25VL |
|---|---|
| File size | 58.498 KB |
| File type | |
| Number of pages | 12 |
Download Datasheet BC806-25VL |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Nexperia BC806-25VL
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 250mW
- Transition Frequency (fT): 80MHz
- DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@500mA,50mA
- Package: SOT-23(TO-236)
- Manufacturer: Nexperia
